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| PSMN016-100XS Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel 100V 16 mΩ standard level MOSFET in TO220F (SOT186A) | |||
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NXP Semiconductors
PSMN016-100XS
N-channel 100V 16 m⦠standard level MOSFET in TO220F (SOT186A)
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions
see Figure 5
vertical in free air
Min Typ Max Unit
-
3
3.25 K/W
-
55 -
K/W
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
0.05
10-1
0.02
10-2
single shot
10-3
10-6
10-5
10-4
10-3
10-2
10-1
003aag618
P
δ = tp
T
tp
t
T
1
10
tp (s) 102
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Isolation characteristics
Table 6.
Symbol
Cisol
Visol(RMS)
Isolation characteristics
Parameter
isolation capacitance
RMS isolation voltage
Conditions
f = 1 MHz
50 Hz ⤠f ⤠60 Hz; RH ⤠65 %; sinusoidal
waveform; clean and dust free
Min Typ Max Unit
-
10 -
pF
-
-
2500 V
PSMN016-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 â 6 March 2012
© NXP B.V. 2012. All rights reserved.
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