PSMN016-100XS Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel 100V 16 mΩ standard level MOSFET in TO220F (SOT186A)

NXP Semiconductors
PSMN016-100XS
N-channel 100V 16 mΩ standard level MOSFET in TO220F (SOT186A)
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_DGR
V_GS
I_D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
T_sld(M)
peak soldering temperature
Source-drain diode
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
V_GS = 10 V; T_mb = 25 °C; see Figure 1
V_GS = 10 V; T_mb = 100 °C; see Figure 1
pulsed; t_p ≤ 10 µs; T_mb = 25 °C; see Figure 4
T_mb = 25 °C; see Figure 2
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
E_DS(AL)S
non-repetitive drain-source
avalanche energy
V_GS = 10 V; T_j(init) = 25 °C; I_D = 32.1 A;
V_sup ≤ 100 V; unclamped; R_GS = 50 Ω;
see Figure 3
Min Max Unit
-
100 V
-
100 V
-20 20 V
-
32.1 A
-
22.7 A
-
128 A
-
46.1 W
-55 175 °C
-55 175 °C
-
260 °C
-
38.5 A
-
128 A
-
138 mJ
40
I_D
(A)
30
20
10
003aag615
120
P_der
(%)
80
40
03aa16
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN016-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
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