PSMN016-100XS Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 100V 16 mΩ standard level MOSFET in TO220F (SOT186A)

NXP Semiconductors
PSMN016-100XS
N-channel 100V 16 mΩ standard level MOSFET in TO220F (SOT186A)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
003aad280
max
typ
min
60
120
180
T_j (°C)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 10. Gate-source threshold voltage as a function of Fig 11. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
40
R_DSon
(mΩ)
30
4.8 5.0
003aag623
3
a
2.5
2
003aag654
20
1.5
5.5
6.0
1
V_GS(V) = 10
10
0.5
0
0
20
40
60
80
100
I_D (A)
0
-60
0
60
120
180
T_j (°C)
Fig 12. Drain-source on-state resistance as a function Fig 13. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
PSMN016-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
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