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| PMPB12UN Datasheet, PDF (9/15 Pages) NXP Semiconductors – 20 V single N-channel Trench MOSFET | |||
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NXP Semiconductors
4.5
VGS
(V)
3.0
017aaa622
1.5
0
0
2
4
6
8
10
QG (nC)
ID = 6 A; VDS = 10 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
1.6
IS
(A)
1.2
PMPB12UN
20 V single N-channel Trench MOSFET
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
017aaa137
Fig. 15. Gate charge waveform definitions
017aaa623
0.8
0.4
Tj = 150 °C
Tj = 25 °C
VGS = 0 V
0
0
0.2
0.4
0.6
0.8
1.0
VSD (V)
Fig. 16. Source current as a function of source-drain voltage; typical values
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
Fig. 17. Duty cycle definition
PMPB12UN
Product data sheet
t
006aaa812
All information provided in this document is subject to legal disclaimers.
6 July 2012
© NXP B.V. 2012. All rights reserved
9 / 15
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