PMPB12UN Datasheet, PDF (7/15 Pages) NXP Semiconductors – 20 V single N-channel Trench MOSFET

NXP Semiconductors
PMPB12UN
20 V single N-channel Trench MOSFET
30
I_D
(A)
4.5 V
2.5 V
20
10
2.25 V
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V_GS = 2 V
1.75 V
1.5 V
10^-2
I_D
(A)
10^-3
10^-4
10^-5
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min
typ
max
1.25 V
0
0
1
2
3
4
V_DS (V)
T_j = 25 °C
10^-6
0
0.5
T_j = 25 °C; V_DS = 5 V
1.0
1.5
V_GS (V)
Fig. 6. Output characteristics: drain current as a
Fig. 7. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
0.05
R_DSon
(Ω)
0.04
1.4 V 1.5 V
1.8 V
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0.10
R_DSon
(Ω)
0.08
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0.03
0.06
0.02
0.01
2.5 V
4.5 V
V_GS = 10 V
0.04
(2)
0.02
0
0
10
T_j = 25 °C
20
30
I_D (A)
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
(1)
0
0
1
2
3
4
5
V_GS (V)
I_D = 200 mA
(1) T_j = 150 °C
(2) T_j = 25 °C
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMPB12UN
Product data sheet
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6 July 2012
© NXP B.V. 2012. All rights reserved
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