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PMPB12UN Datasheet, PDF (6/15 Pages) NXP Semiconductors – 20 V single N-channel Trench MOSFET
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NXP Semiconductors
PMPB12UN
20 V single N-channel Trench MOSFET
Symbol
IGSS
RDSon
Parameter
gate leakage current
drain-source on-state
resistance
gfs
forward
transconductance
RG
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
Conditions
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 7.9 A; Tj = 25 °C
VGS = 4.5 V; ID = 7.9 A; Tj = 150 °C
VGS = 2.5 V; ID = 3.5 A; Tj = 25 °C
VGS = 1.8 V; ID = 3.5 A; Tj = 25 °C
VDS = 10 V; ID = 7.9 A; Tj = 25 °C
f = 1 MHz
VDS = 10 V; ID = 6 A; VGS = 4.5 V;
Tj = 25 °C
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = 10 V; ID = 6 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
IS = 1.8 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
-
-
100 nA
-
-
100 nA
-
14
18
mΩ
-
21
27
mΩ
-
17
23
mΩ
-
21
33
mΩ
-
25
-
S
-
1.4 -
Ω
-
8.8 13
nC
-
1
-
nC
-
2.2 -
nC
-
886 -
pF
-
233 -
pF
-
129 -
pF
-
9
-
ns
-
20
-
ns
-
26
-
ns
-
26
-
ns
-
0.6 1.2 V
PMPB12UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 July 2012
© NXP B.V. 2012. All rights reserved
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