PMPB12UN Datasheet, PDF (2/15 Pages) NXP Semiconductors – 20 V single N-channel Trench MOSFET

NXP Semiconductors
PMPB12UN
20 V single N-channel Trench MOSFET
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
7
D
drain
8
S
source
Simplified outline
1
6
7
2
5
Graphic symbol
D
G
3
8
4
Transparent top view
DFN2020MD-6 (SOT1220)
S
017aaa253
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
PMPB12UN
DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
Version
SOT1220
4. Marking
Table 4. Marking codes
Type number
PMPB12UN
Marking code
1F
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = 4.5 V; T_amb = 25 °C; t ≤ 5 s
[1]
V_GS = 4.5 V; T_amb = 25 °C
[1]
V_GS = 4.5 V; T_amb = 100 °C
[1]
I_DM
peak drain current
T_amb = 25 °C; single pulse; t_p ≤ 10 µs
P_tot
total power dissipation
T_amb = 25 °C
[1]
PMPB12UN
All information provided in this document is subject to legal disclaimers.
Product data sheet
6 July 2012
Min Max Unit
-
20
V
-8
8
V
-
11.3 A
-
7.9 A
-
5
A
-
31
A
-
1.7 W
© NXP B.V. 2012. All rights reserved
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