PMPB12UN Datasheet, PDF (5/15 Pages) NXP Semiconductors – 20 V single N-channel Trench MOSFET

NXP Semiconductors
PMPB12UN
20 V single N-channel Trench MOSFET
10³
Z_th(j-a)
(K/W)
10²
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
10
0.02
0.01
0
017aaa542
1
10^-3
10^-2
10^-1
1
FR4 PCB, standard footprint
10
10²
10³
t_p (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10³
017aaa543
Z_th(j-a)
(K/W)
10² _{duty cycle = 1}
0.75
0.33
0.2
10
0.5
0.25
0.1
0.05
0.02
0
0.01
1
10^-3
10^-2
10^-1
1
FR4 PCB, mounting pad for drain 6 cm²
10
10²
10³
t_p (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V_(BR)DSS
drain-source
breakdown voltage
I_D = 250 µA; V_GS = 0 V; T_j = 25 °C
V_GSth
gate-source threshold I_D = 250 µA; V_DS = V_GS; T_j = 25 °C
voltage
I_DSS
drain leakage current V_DS = 20 V; V_GS = 0 V; T_j = 25 °C
V_DS = 20 V; V_GS = 0 V; T_j = 150 °C
PMPB12UN
All information provided in this document is subject to legal disclaimers.
Product data sheet
6 July 2012
Min Typ Max Unit
20
-
-
V
0.4 0.7 1
V
-
-
1
µA
-
-
100 µA
© NXP B.V. 2012. All rights reserved
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