PMPB12UN Datasheet, PDF (1/15 Pages) NXP Semiconductors – 20 V single N-channel Trench MOSFET

PMPB12UN
20 V single N-channel Trench MOSFET
6 July 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
• Trench MOSFET technology
• Very fast switching
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portables
• Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j = 25 °C
V_GS = 4.5 V; T_amb = 25 °C; t ≤ 5 s
V_GS = 4.5 V; I_D = 7.9 A; T_j = 25 °C
Min Typ Max Unit
-
-
20
V
-8
-
8
V
[1]
-
-
11.3 A
-
14
18
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
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