PBHV2160Z_15 Datasheet, PDF (9/13 Pages) NXP Semiconductors – 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
12. Soldering
1.3 1.2
(4×) (4×)
7
3.85
3.6
3.5
0.3
4
3.9 6.1 7.65
1
2
3
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
Fig. 14. Reflow soldering footprint for SC-73 (SOT223)
8.9
6.7
1.9
4
1
2
3
2.7
2.7
1.1
1.9
(2×)
Fig. 15. Wave soldering footprint for SC-73 (SOT223)
6.2
8.7
1.9
(3×)
sot223_fr
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot223_fw
PBHV2160Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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