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| PBHV2160Z_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor | |||
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NXP Semiconductors
PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
10. Characteristics
Table 7.
Symbol
ICBO
ICES
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
Characteristics
Parameter
Conditions
collector-base cut-off
current
VCB = 400 V; IE = 0 A; Tamb = 25 °C
VCB = 400 V; IE = 0 A; Tj = 150 °C
collector-emitter cut-off VCE = 400 V; VBE = 0 V; Tamb = 25 °C
current
emitter-base cut-off
current
VEB = 4.8 V; IC = 0 A; Tamb = 25 °C
DC current gain
VCE = 10 V; IC = 10 mA; Tamb = 25 °C
collector-emitter
saturation voltage
IC = 30 mA; IB = 6 mA; Tamb = 25 °C
base-emitter saturation IC = 50 mA; IB = 5 mA; pulsed;
voltage
tp ⤠300 µs; δ ⤠0.02 ; Tamb = 25 °C
collector capacitance
VCB = 20 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
emitter capacitance
VEB = 0.5 V; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
200
hFE
150
aaa-013583
(1)
200
hFE
150
(2)
100
100
(3)
50
50
Min Typ Max Unit
-
-
100 nA
-
-
10
µA
-
-
100 nA
-
-
100 nA
70
125 -
-
65
125 mV
-
-
950 mV
-
1.7 -
pF
-
81
-
pF
aaa-014045
(1)
(2)
(3)
0
10-1
1
10
VCE = 10 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
102
103
IC (mA)
Fig. 4. DC current gain as a function of collector
current; typical values
0
10-1
1
10
Tamb = 25 °C
(1) VCE = 50 V
(2) VCE = 25 V
(3) VCE = 10 V
102
103
IC (mA)
Fig. 5. DC current gain as a function of collector
current; typical values
PBHV2160Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 13
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