PBHV2160Z_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
11. Package outline
Plastic surface-mounted package with increased heatsink; 4 leads
SOT223
D
B
E
A
X
c
y
H_E
b₁
4
vM A
A₁
1
2
3
e₁
b_p
e
wM B
Q
A
L_p
detail X
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A₁
b_p
b₁
c
D
E
e
e₁ H_E L_p
Q
v
w
y
mm
1.8 0.10 0.80 3.1 0.32 6.7
1.5 0.01 0.60 2.9 0.22 6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1 0.95
0.7 0.85
0.2
0.1
0.1
OUTLINE
VERSION
IEC
SOT223
REFERENCES
JEDEC
JEITA
SC-73
Fig. 13. Package outline SC-73 (SOT223)
PBHV2160Z
All information provided in this document is subject to legal disclaimers.
Product data sheet
24 June 2015
EUROPEAN
PROJECTION
ISSUE DATE
04-11-10
06-03-16
© NXP Semiconductors N.V. 2015. All rights reserved
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