PBHV2160Z_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor

PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
24 June 2015
Product data sheet
1. General description
NPN high-voltage low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223
(SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV3160Z
2. Features and benefits
• Low collector-emitter saturation voltage V_CEsat
• High collector current capability
• High collector current gain h_FE at high I_C
3. Applications
• Electronic ballast for fluorecent lighting
• LED driver for LED chain module
• LCD backlighting
• HID front lighting
• Hook switch for wired telecom
• Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1.
Symbol
V_CEO
I_C
Quick reference data
Parameter
collector-emitter
voltage
collector current
Conditions
open base
Min Typ Max Unit
-
-
600 V
-
-
0.1 A
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