PBHV2160Z_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
1
V_CEsat
(V)
10^-1
aaa-013588
(1)
(2)
(3)
10³
R_CEsat
(Ω)
10²
10
1
aaa-013589
(1)
(2)
(3)
10^-2
10^-1
1
10
T_amb = 25 °C
(1) I_C/I_B = 10
(2) I_C/I_B = 5
(3) I_C/I_B = 2.5
10²
10³
I_C (mA)
Fig. 10. Collector-emitter saturation voltage as a
function of collector current; typical values
10³
R_CEsat
(Ω)
10²
10^-1
10^-1
1
10
I_C/I_B = 5
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
10²
10³
I_C (mA)
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
aaa-013590
(1)
10
(2)
1
(3)
T_amb = 25 °C
(1) I_C/I_B = 10
(2) I_C/I_B = 5
(3) I_C/I_B = 2.5
10^-1
10^-1
1
10
10²
10³
I_C (mA)
Fig. 12. Collector-emitter saturation resistance as a function of collector current; typical values
PBHV2160Z
Product data sheet
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24 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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