PBHV2160Z_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_CBO
collector-base voltage
open emitter
V_CEO
collector-emitter voltage
open base
V_CESM
collector-emitter peak voltage V_BE = 0 V
V_EBO
emitter-base voltage
open collector
I_C
collector current
P_tot
total power dissipation
T_amb ≤ 25 °C
T_j
T_amb
T_stg
junction temperature
ambient temperature
storage temperature
Min Max Unit
-
600 V
-
600 V
-
600 V
-
6
V
-
0.1 A
[1]
-
0.65 W
[2]
-
1.4 W
-
150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm}²_.
1.6
P_tot
(W)
(1)
1.2
aaa-013425
0.8
(2)
0.4
0
-60
20
Fig. 1.
(1) FR4 PCB, mounting pad for collector 6 cm²
(2) FR4 PCB, standard footprint
Power derating curves
100
180
T_amb (°C)
PBHV2160Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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