BUK7210-55B_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7210-55B
N-channel TrenchMOS standard level FET
100
I_S
(A)
75
003aac281
50
25
0
0.0
Tj = 185 °C
0.3
0.6
Tj = 25 °C
0.9
1.2
V_SD (V)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 12. Gate charge waveform definitions
Fig 11. Source current as a function of source-drain
voltage; typical values
10
V_GS
(V)
7.5
5
VDD = 14 V
003aac280
VDD = 44 V
3000
C (pF)
2000
003aac278
C_iss
2.5
0
0
10
20
30
40
Q_G (nC)
1000
C_oss
C_rss
0
10^-1
1
10
10²
VDS (V)
Fig 13. Gate-source voltage as a function of gate
charge; typical values
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7210-55B_1
Product data sheet
Rev. 01 — 11 December 2008
© NXP B.V. 2008. All rights reserved.
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