BUK7210-55B_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7210-55B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T_j ≥ 25 °C; T_j ≤ 185 °C
R_GS = 20 kΩ; 25 °C ≤ T_j ≤ 185 °C
T_mb = 25 °C; V_GS = 10 V; see Figure 1;
see Figure 3;
T_mb = 100 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; V_GS = 10 V; see Figure 1;
see Figure 3;
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_mb = 25 °C; t_p ≤ 10 µs; pulsed
T_mb = 25 °C; see Figure 2
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C;
T_mb = 25 °C;
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
E_DS(AL)S
non-repetitive
I_D = 75 A; V_sup ≤ 55 V; R_GS = 50 Ω; V_GS = 10 V;
drain-source avalanche T_j(init) = 25 °C; unclamped inductive load
energy
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
[3] Current is limited by power dissipation chip rating.
Min Max Unit
-
55
V
-
55
V
-20 20
V
[1] -
89.6 A
-
[2] -
65.5 A
75
A
-
335 A
-
167 W
-55 185 °C
-55 185 °C
[2] -
[3] -
-
75
A
89.6 A
335 A
-
173 mJ
BUK7210-55B_1
Product data sheet
Rev. 01 — 11 December 2008
© NXP B.V. 2008. All rights reserved.
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