BUK7210-55B_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7210-55B
N-channel TrenchMOS standard level FET
100
I_D
(A)
75
003aac284
Capped at 75A due to package
50
25
0
0
50
100
150
200
T_mb (°C)
120
P_der
(%)
80
03no96
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
10³
I_D
Limit R_DSon = V_DS / I_D
(A)
10²
Capped at 75 A due to package
DC
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
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t_p = 10 μ s
100 μs
1 ms
10 ms
100 ms
1
1
10
V_DS (V)
10²
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7210-55B_1
Product data sheet
Rev. 01 — 11 December 2008
© NXP B.V. 2008. All rights reserved.
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