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BUK7210-55B_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
BUK7210-55B
N-channel TrenchMOS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Source-drain diode
VSD
source-drain voltage IS = 18 A; VGS = 0 V; Tj = 150 °C
IS = 18 A; VGS = 0 V; Tj = 175 °C
IS = 18 A; VGS = 0 V; Tj = 100 °C
IS = 18 A; VGS = 0 V; Tj = 25 °C; see
Figure 11
IS = 18 A; VGS = 0 V; Tj = 125 °C
IS = 18 A; VGS = 0 V; Tj = 185 °C; see
Figure 11
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
Qr
recovered charge
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
-
0.76 -
V
-
0.74 -
V
-
0.8 -
V
-
0.85 1.2 V
-
0.78 -
V
-
0.73 -
V
-
67
-
ns
-
65
-
nC
100
ID
(A)
75
003aac279
50
25
0
0
Tj = 185 °C
Tj = 25 °C
2
4
6
8
VGS (V)
18
RDSon
(m Ω)
16
14
12
10
8
6
5
003aac285
10
15
20
VGS (V)
Fig 5. Transfer characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values.
BUK7210-55B_1
Product data sheet
Rev. 01 — 11 December 2008
© NXP B.V. 2008. All rights reserved.
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