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| BUK7210-55B_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK7210-55B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
drain leakage current
IGSS
RDSon
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C; see
Figure 7
ID = 1 mA; VDS = VGS; Tj = 25 °C; see
Figure 7; see Figure 8
ID = 1 mA; VDS = VGS; Tj = 185 °C; see
Figure 7
ID = 1 mA; VDS = VGS; Tj = -40 °C; see
Figure 7
ID = 1 mA; VDS = VGS; Tj = -55 °C; see
Figure 7
VDS = 55 V; VGS = 0 V; Tj = 175 °C
VDS = 55 V; VGS = 0 V; Tj = 125 °C
VDS = 55 V; VGS = 0 V; Tj = 25 °C
VDS = 55 V; VGS = 0 V; Tj = 185 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 185 °C; see
Figure 9
VGS = 10 V; ID = 25 A; Tj = 25 °C; see
Figure 10; see Figure 9
ID = 25 A; VDS = 44 V; VGS = 10 V;
Tj = 25 °C; see Figure 12; see Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 25 V; RL = 1.2 â¦; VGS = 10 V;
RG(ext) = 10 â¦; Tj = 25 °C
measured from drain to center of die;
Tj = 25 °C
measured from source lead to source
bond pad; Tj = 25 °C
Min Typ Max Unit
55
-
-
V
50
-
-
V
-
1.75 -
V
2
3
4
V
0.9 -
-
V
-
2.8 -
V
-
-
4.4 V
-
1.5 500 µA
-
0.1 90
µA
-
0.02 1
µA
-
3
800 µA
-
2
100 nA
-
2
100 nA
-
-
20.8 mâ¦
-
8.5 10
mâ¦
-
35
-
nC
-
9
-
nC
-
12
-
nC
-
1840 2453 pF
-
379 455 pF
-
165 226 pF
-
18
-
ns
-
91
-
ns
-
48
-
ns
-
45
-
ns
-
2.5 -
nH
-
7.5 -
nH
BUK7210-55B_1
Product data sheet
Rev. 01 â 11 December 2008
© NXP B.V. 2008. All rights reserved.
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