BUK7210-55B_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7210-55B
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
3
2
1
003aac282
max
typ
min
0
-60
10
80
150
220
T_j (°C)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 7. Gate-source threshold voltage as a function of Fig 8. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
003aac283
003aac276
2.4
25
Lable is V_GS (V)
RDSon
6 6.5 7
8
a
(mΩ )
10 20
20
1.6
15
0.8
10
0
-60
10
80
150 _{Tj (°C)} 220
5
0
75
150
225 _{ID (A)} 300
Fig 9. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 10. Drain-source on-state resistance as a function
of drain current; typical values
BUK7210-55B_1
Product data sheet
Rev. 01 — 11 December 2008
© NXP B.V. 2008. All rights reserved.
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