BUK221-50DY Datasheet, PDF (9/16 Pages) NXP Semiconductors – Dual channel high-side TOPFET

Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFET™
5
IS
(mA)
4
3
2
1
03pa94
16
IL(lim)
(A)
12
8
4
03pa93
0
0
1
2
3
VSG (V)
V_BG = 13 V; V_IG = 5 V; T_j = 25 °C
Fig 6. Status current as a function of status-ground
voltage; typical values.
0
0
4
8
12
16
VBL (V)
V_BG = 16 V; V_IG = 5 V; T_mb = 25 °C
Fig 7. Self-limiting load current as a function of
battery-load voltage; typical values.
3.5
VIG(th)
(V)
3
2.5
03pa98
max
6
IB
(µ A)
4
03pa97
2
VIG(ON)
VIG(OFF)
1.5
min
1
-50
0
50
100
150
200
Tj (°C)
2
0
-50
0
50
100
150
200
Tj (°C)
5.5 V ≤ V_BG ≤ 35 V
Fig 8. Input-ground threshold voltage as a function of
junction temperature.
V_BG = 35 V
Fig 9. Battery quiescent current as a function of
junction temperature; typical values.
9397 750 11167
Product data
Rev. 01 — 16 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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