BUK221-50DY Datasheet, PDF (8/16 Pages) NXP Semiconductors – Dual channel high-side TOPFET

Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFET™
200
RBLon
(mΩ)
160
120
80
40
03pa96
T_j = 150°C
T_j = 25°C
T_j = -40°C
0
0
10
20
30
40
VBG (V)
I_L = 4 A; V_IG = 5 V
Fig 4. Battery-load on-state resistance as a function of battery-ground voltage; typical values.
4
IG
(mA)
3 _undervoltage
shutdown
2
1
T_j = -40°C
T_j = 25°C
T_j = 150°C
overvoltage
shutdown
03pa95
clamping
0
0
25
50
75
VBG (V)
V_IG = 5 V
Fig 5. Supply current characteristics: operating current as a function of battery-ground voltage for one channel
only; typical values.
9397 750 11167
Product data
Rev. 01 — 16 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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