BUK203-50Y Datasheet, PDF (9/13 Pages) NXP Semiconductors – PowerMOS transistor TOPFET high side switch

Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product specification
BUK203-50Y
VSG / V
8.0
VIG / V =
7.5
5
0
7.0
BUK203-50Y
6.5
-60
-20
20
60
100
140
180
Tj / C
Fig.22. Typical status clamping voltage, V_SG = f(T_j).
parameter V_IG; conditions I_S = 100 µA, V_BG = 13 V
IL(OC) / mA
200
max.
BUK203-50Y
100
typ.
min.
0
-60
-20
20
60
100
140
180
Tj / C
Fig.23. Low load current detection threshold.
I_L(OC) = f(T_j); conditions V_IG = 5 V; V_BG = 13 V
VBG(TO) / V
5
BUK203-50Y
4
on
3
off
2
1
0
-60
-20
20
60
100
140
180
Tj / C
Fig.24. Supply typical undervoltage thresholds.
V_BG(TO) = f(T_j); conditions V_IG = 3 V; I_L = 100 mA
VBG(LP) / V
47
BUK203-50Y
46
off
45
on
44
43
-60
-20
20
60
100
140
180
Tj / C
Fig.25. Supply typical overvoltage thresholds.
V_BG(LP) = f(T_j); conditions V_IG = 5 V; I_L = 100 mA
VBG / V
65
BUK203-50Y
60
IG =
1 mA
10 uA
55
50
-60
Fig.26.
-20
20
60
100
140
180
Tj / C
Typical battery to ground clamping voltage.
V_BG = f(T_j); parameter I_G
IL / A
10
BUK203-50Y
9
8
7
6
5
4
3
2
1
0
-24
-20
-16
-12
-8
-4
0
VLG / V
Fig.27. Typical negative load clamping characteristic.
I_L = f(V_LG); conditions V_IG = 0 V, t_p = 300 µs, 25 ˚C
April 1995
9
Rev 1.100