BUK203-50Y Datasheet, PDF (7/13 Pages) NXP Semiconductors – PowerMOS transistor TOPFET high side switch

Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
5 ^{IG / mA}
4
BUK203-50Y
CLAMPING
3
OPERATING VIG = 3 V
2
HIGH VOLTAGE
1
QUIESCENT VIG = 0 V
0
0
10
20
30
40
50
60
VBG / V
Fig.10. Typical supply characteristics, 25 ˚C.
I_G = f(V_BG); parameter V_IG
IG / mA
3
BUK203-50Y
VBG / V =
2
13
1
50
0
-60
-20
20
60
100
140
180
Tj / C
Fig.11. Typical operating supply current.
I_G = f(T_j); parameter V_BG; condition V_IG = 5 V
IB
100 uA
BUK203-50Y
10 uA
1 uA
100 nA
10 nA
-60
-20
20
60
100 140 180
Tj / C
Fig.12. Typical supply quiescent current.
I_B = f(T_j); condition V_BG = 13 V, V_IG = 0 V, V_LG = 0 V
Product specification
BUK203-50Y
IL
100 uA
BUK203-50Y
10 uA
1 uA
100 nA
10 nA
1 nA
-60
-20
20
60
100 140 180
Tj / C
Fig.13. Typical off-state leakage current.
I_L = f(T_j); conditions: V_BL = 13 V = V_BG; V_IG = 0 V.
200 ^{II / uA}
BUK203-50Y
150
VBG / V =
5
7
100
13
50
0
0
Fig.14.
2
4
6
8
VIG / V
Typical input characteristics, T_j = 25 ˚C.
I_I = f(V_IG); parameter V_BG
II / uA
100
BUK203-50Y
80
60
40
20
0
0
10
20
30
40
50
VBG / V
Fig.15. Typical input current, T_j = 25 ˚C.
I_I = f(V_BG); condition V_IG = 5 V
April 1995
7
Rev 1.100