BUK203-50Y Datasheet, PDF (5/13 Pages) NXP Semiconductors – PowerMOS transistor TOPFET high side switch

Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
DYNAMIC CHARACTERISTICS
T_mb = 25 ˚C; V_BG = 13 V
SYMBOL PARAMETER
CONDITIONS
Inductive load turn-off
-V_LG
Negative load voltage¹
V_IG = 0 V; I_L = 2 A; t_p = 300 µs
Short circuit load protection² V_IG = 5 V; R_L ≤ 10 mΩ
t_{d sc}
Response time
I_L
Load current prior to turn-off t < t_{d sc}
Overload protection³
I_L(lim)
Load current limiting
V_BL = 9 V; t_p = 300 µs
SWITCHING CHARACTERISTICS
T_mb = 25 ˚C, V_BG = 13 V, for resistive load R_L = 13 Ω.
SYMBOL PARAMETER
CONDITIONS
t_{d on}
dV/dt_on
During turn-on
Delay time
Rate of rise of load voltage
to V_IG = 5 V
to 10% V_L
t _on
Total switching time
to 90% V_L
t_{d off}
dV/dt_off
t _off
During turn-off
Delay time
Rate of fall of load voltage
Total switching time
to V_IG = 0 V
to 90% V_L
to 10% V_L
CAPACITANCES
T_mb = 25 ˚C; f = 1 MHz; V_IG = 0 V
SYMBOL PARAMETER
C_ig
Input capacitance
C_bl
Output capacitance
C_sg
Status capacitance
CONDITIONS
V_BG = 13 V
V_BL = V_BG = 13 V
V_SG = 5 V
Product specification
BUK203-50Y
MIN. TYP. MAX. UNIT
15 20 25
V
-
75
-
µs
-
17
-
A
12 15 22
A
MIN. TYP. MAX. UNIT
-
16
-
µs
-
1.3
3 V/µs
-
40
-
µs
-
20
-
µs
-
1.6
3 V/µs
-
35
-
µs
MIN.
-
-
-
TYP.
15
120
11
MAX.
20
170
15
UNIT
pF
pF
pF
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes
high.
3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than V_BL(TO), the device remains in
current limiting until the overtemperature protection operates.
April 1995
5
Rev 1.100