BUK203-50Y Datasheet, PDF (1/13 Pages) NXP Semiconductors – PowerMOS transistor TOPFET high side switch

Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product specification
BUK203-50Y
DESCRIPTION
Monolithic temperature and
overload protected power switch
based on MOSFET technology in a
5 pin plastic envelope, configured
as a single high side switch.
APPLICATIONS
General controller for driving
lamps, motors, solenoids, heaters.
QUICK REFERENCE DATA
SYMBOL PARAMETER
I_L
Nominal load current (ISO)
SYMBOL PARAMETER
V_BG
Continuous off-state supply voltage
I_L
Continuous load current
T_j
Continuous junction temperature
R_ON
On-state resistance
MIN.
1.6
UNIT
A
MAX.
50
4
150
220
UNIT
V
A
˚C
mΩ
FEATURES
Vertical power DMOS switch
Low on-state resistance
5 V logic compatible input
Overtemperature protection -
self resets with hysteresis
Overload protection against
short circuit load with
output current limiting;
latched - reset by input
High supply voltage load
protection
Supply undervoltage lock out
Status indication for overload
protection activated
Diagnostic status indication
of open circuit load
Very low quiescent current
Voltage clamping for turn off of
inductive loads
ESD protection on all pins
Reverse battery and
overvoltage protection
PINNING - SOT263
PIN
DESCRIPTION
1 Ground
2 Input
3 Battery (+ve supply)
4 Status
5 Load
tab connected to pin 3
FUNCTIONAL BLOCK DIAGRAM
STATUS
INPUT
GROUND
CONTROL &
PROTECTION
CIRCUITS
RG
BATT
POWER
MOSFET
LOAD
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PIN CONFIGURATION
SYMBOL
tab
1 2345
leadform
263-01
Fig. 2.
I
B
TOPFET _L
S ^HSS
G
Fig. 3.
April 1995
1
Rev 1.100