BUK203-50Y Datasheet, PDF (2/13 Pages) NXP Semiconductors – PowerMOS transistor TOPFET high side switch

Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product specification
BUK203-50Y
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
Battery voltages
V_BG
Continuous off-state supply voltage
-
Reverse battery voltages¹
External resistors:
-V_BG
Repetitive peak supply voltage
R_I = R_S ≥ 4.7 kΩ, δ ≤ 0.1
-V_BG
Continuous reverse supply voltage R_I = R_S ≥ 4.7 kΩ
I_L
Continuous load current
T_mb ≤ 110 ˚C
P_D
Total power dissipation
T_mb ≤ 25 ˚C
T_stg
Storage temperature
-
T_j
Continuous junction temperature²
-
T_sold
Lead temperature
during soldering
Input and status
I_I
Continuous input current
-
I_S
Continuous status current
-
I_I
Repetitive peak input current
I_S
Repetitive peak status current
δ ≤ 0.1
δ ≤ 0.1
Inductive load clamping
E_BL
Non-repetitive clamping energy
T_mb = 150 ˚C prior to turn-off
ESD LIMITING VALUE
SYMBOL PARAMETER
V_C
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
0
-
-
-
-
-55
-
-
-5
-5
-20
-20
-
MIN.
-
MAX.
50
32
16
4
50
175
150
250
5
5
20
20
1.4
MAX.
2
UNIT
V
V
V
A
W
˚C
˚C
˚C
mA
mA
mA
mA
J
UNIT
kV
THERMAL CHARACTERISTICS
SYMBOL PARAMETER
Thermal resistance³
R_{th j-mb}
R_{th j-a}
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
MIN. TYP. MAX. UNIT
-
2
2.5 K/W
-
60 75 K/W
1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value.
2 For normal continuous operation. A higher T_j is allowed as an overload condition but at the threshold T_j(TO) the over temperature trip operates
to protect the switch.
3 Of the output Power MOS transistor.
April 1995
2
Rev 1.100