BFU690F_15 Datasheet, PDF (9/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 8. Abbreviations
Acronym
Description
DRO
Dielectric Resonator Oscillator
Ka
Kurtz above
LTE
Long Term Evolution
NPN
Negative-Positive-Negative
UMTS
Universal Mobile Telecommunications System
11. Revision history
Table 9. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
BFU690F v.2
Modifications:
20140314
Product data sheet
-
BFU690F v.1
• Table 1 on page 1: The value and conditions for P_tot have been updated.
• Table 5 on page 2: The value and conditions for P_tot have been updated.
• Table 6 on page 3: The value and conditions for R_th(j-sp) have been updated.
• Figure 1 on page 3: The graph has been updated.
• Section 9 on page 9: The ESD caution has been moved here from Section 1.1 on page 1.
BFU690F v.1
20101216
Product data sheet
-
-
BFU690F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 14 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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