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BFU690F_15 Datasheet, PDF (7/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor
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NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
40
G
(dB)
30
20
MSG
10 |S21|2
001aam838
Gp(max)
40
G
(dB)
30
MSG
20
|S21|2
10
001aam839
Gp(max)
0
0
2
4
6
8
10
f (GHz)
0
0
2
4
6
8
10
f (GHz)
VCE = 1 V; IC = 10 mA; Tamb = 25 C.
VCE = 1 V; IC = 60 mA; Tamb = 25 C.
Fig 7. Gain as a function of frequency; typical values Fig 8. Gain as a function of frequency; typical values
1.0
NFmin
(dB)
0.8
0.6
001aam840
(1)
(2)
(3)
1.0
NFmin
(dB)
0.8
0.6
001aam841
0.4
0.4
0.2
0.2
0
10 15 20 25 30 35 40 45
IC (mA)
VCE = 2 V; Tamb = 25 C.
(1) f = 2.4 GHz
(2) f = 1.8 GHz
(3) f = 1.5 GHz
Fig 9. Minimum noise figure as a function of
collector current; typical values
0
0
1
2
3
f (GHz)
VCE = 2 V; IC = 15 mA; Tamb = 25 C.
Fig 10. Minimum noise figure as a function of
frequency; typical values
BFU690F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 14 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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