BFU690F_15 Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
7. Characteristics
Table 7. Characteristics
T_j = 25 C unless otherwise specified
Symbol Parameter
V_(BR)CBO
V_(BR)CEO
I_C
I_CBO
h_FE
C_CES
C_EBS
C_CBS
f_T
collector-base breakdown voltage
collector-emitter breakdown voltage
collector current
collector-base cut-off current
DC current gain
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
G_p(max) maximum power gain
s₂₁²
insertion power gain
NF
noise figure
G_ass
associated gain
P_L(1dB) output power at 1 dB gain compression
IP3
third-order intercept point
Conditions
Min Typ
I_C = 2.5 A; I_E = 0 mA
I_C = 1 mA; I_B = 0 mA
16 -
5.5 -
- 70
I_E = 0 mA; V_CB = 8 V
I_C = 20 mA; V_CE = 2 V
V_CB = 2 V; f = 1 MHz
V_EB = 0.5 V; f = 1 MHz
V_CB = 2 V; f = 1 MHz
I_C = 60 mA; V_CE = 1 V; f = 2 GHz;
T_amb = 25 C
I_C = 60 mA; V_CE = 1 V; T_amb = 25 C
f = 1.5 GHz
--
90 135
- 527
- 1699
- 404
- 18
[1]
- 22
f = 1.8 GHz
- 20.5
f = 2.4 GHz
- 17
I_C = 60 mA; V_CE = 1 V; T_amb = 25 C
f = 1.5 GHz
- 15
f = 1.8 GHz
- 13.5
f = 2.4 GHz
- 11
I_C = 15 mA; V_CE = 2 V; _S = _opt;
T_amb = 25 C
f = 1.5 GHz
- 0.60
f = 1.8 GHz
- 0.65
f = 2.4 GHz
- 0.70
I_C = 15 mA; V_CE = 2 V; _S = _opt;
T_amb = 25 C
f = 1.5 GHz
- 18.5
f = 1.8 GHz
- 17.5
f = 2.4 GHz
- 15.5
I_C = 70 mA; V_CE = 4 V; Z_S = Z_L = 50 ;
T_amb = 25 C
f = 1.5 GHz
- 22
f = 1.8 GHz
- 22
f = 2.4 GHz
- 20
I_C = 70 mA; V_CE = 4 V; Z_S = Z_L = 50 ;
T_amb = 25 C
f = 1.5 GHz
- 34
f = 1.8 GHz
- 34
f = 2.4 GHz
- 33
Max Unit
-V
-V
100 mA
100 nA
180
- fF
- fF
- fF
- GHz
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dBm
- dBm
- dBm
- dBm
- dBm
- dBm
[1] G_p(max) is the maximum power gain, if K > 1. If K < 1 then G_p(max) = MSG.
BFU690F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 14 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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