BFU690F_15 Datasheet, PDF(1/12 Page) NXP Semiconductors – NPN wideband silicon RF transistor

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BFU690F_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

BFU690F

NPN wideband silicon RF transistor

Rev. 2 â 14 March 2014

Product data sheet

1. Product profile

1.1 General description

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin

dual-emitter SOT343F package.

1.2 Features and benefits

ï® Low noise high linearity microwave transistor

ï® High output third-order intercept point 34 dBm at 1.8 GHz

ï® 40 GHz fT silicon technology

1.3 Applications

ï® Ka band oscillators DROâs

ï® C-band high output buffer amplifier

ï® ZigBee

ï® LTE, cellular, UMTS

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Min Typ Max Unit

VCBO

VCEO

VEBO

Ptot

hFE

CCBS

Gp(max)

PL(1dB)

collector-base voltage

open emitter

collector-emitter voltage

open base

emitter-base voltage

open collector

collector current

total power dissipation

Tsp ï£ 85 ï°C

[1] -

DC current gain

IC = 20 mA; VCE = 2 V; Tj = 25 ï°C

collector-base capacitance

VCB = 2 V; f = 1 MHz

transition frequency

IC = 60 mA; VCE = 1 V; f = 2 GHz;

Tamb = 25 ï°C

maximum power gain

IC = 60 mA; VCE = 1 V; f = 1.8 GHz;

[2] -

Tamb = 25 ï°C

noise figure

IC = 15 mA; VCE = 2 V; f = 1.8 GHz; ïS = ïopt -

output power at 1 dB gain compression IC = 70 mA; VCE = 4 V; ZS = ZL = 50 ï;

f = 1.8 GHz; Tamb = 25 ï°C

- 16 V

- 5.5 V

- 2.5 V

70 100 mA

- 490 mW

135 180

404 - fF

18 - GHz

20.5 - dB

0.65 -

22 -

dBm

[1] Tsp is the temperature at the solder point of the emitter lead.

[2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG).

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