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BFU690F_15 Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
80
IC
(mA)
60
40
20
001aam833
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
0
0
1
2
3
4
5
VCE (V)
Tamb = 25 ï°C.
(1) IB = 550 ïA
(2) IB = 500 ïA
(3) IB = 450 ïA
(4) IB = 400 ïA
(5) IB = 350 ïA
(6) IB = 300 ïA
(7) IB = 250 ïA
(8) IB = 200 ïA
(9) IB = 150 ïA
(10) IB = 100 ïA
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
200
hFE
150
001aam834
100
50
0
0
20
40
60
VCE = 2 V; Tamb = 25 ï°C.
80
100
IC (mA)
Fig 3. DC current gain as a function of collector
current; typical values
BFU690F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 14 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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