BFU690F_15 Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline Graphic symbol







PEE
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BFU690F
-
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
4. Marking
Table 4. Marking
Type number
BFU690F
Marking
D4*
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
T_sp  85 C
-
-
-
-
[1] _-
65
-
[1] T_sp is the temperature at the solder point of the emitter lead.
Max
16
5.5
2.5
100
490
+150
150
Unit
V
V
V
mA
mW
C
C
BFU690F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 14 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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