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BFU580Q_15 Datasheet, PDF (9/21 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU580Q
NPN wideband silicon RF transistor
I7
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DDD
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Tamb = 25 ï°C.
(1) VCE = 3.3 V
(2) VCE = 5.0 V
(3) VCE = 8.0 V
(4) VCE = 12.0 V
Fig 9. Transition frequency as a function of collector current; typical values
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DDD
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G%
DDD
06*
06*
*SPD[
_V_
*SPD[
_V_
I0+]
I0+]
IC = 20 mA; VCE = 8 V; Tamb = 25 ï°C.
IC = 30 mA; VCE = 8 V; Tamb = 25 ï°C.
Fig 10. Gain as a function of frequency; typical values Fig 11. Gain as a function of frequency; typical values
BFU580Q
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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