|
BFU580Q_15 Datasheet, PDF (1/21 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
|
BFU580Q
NPN wideband silicon RF transistor
Rev. 1 â 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic,
3-pin SOT89 package.
The BFU580Q is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
ï® Low noise, high linearity, high breakdown RF transistor
ï® AEC-Q101 qualified
ï® Minimum noise figure (NFmin) = 0.75 dB at 900 MHz
ï® Maximum stable gain 14 dB at 900 MHz
ï® 11 GHz fT silicon technology
1.3 Applications
ï® Applications requiring high supply voltages and high breakdown voltages
ï® Broadband amplifiers up to 2 GHz
ï® Low noise, high linearity amplifiers for ISM applications
ï® Automotive applications (e.g., antenna amplifiers)
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 ï°C unless otherwise specified
Symbol Parameter
Conditions
VCB
collector-base voltage
open emitter
VCE
collector-emitter voltage open base
shorted base
VEB
emitter-base voltage
open collector
IC
collector current
Ptot
total power dissipation
Tsp ï£ 120 ï°C
hFE
DC current gain
IC = 30 mA; VCE = 8 V
Cc
collector capacitance
VCB = 8 V; f = 1 MHz
fT
transition frequency
IC = 30 mA; VCE = 8 V; f = 900 MHz
Min Typ Max Unit
--
24 V
--
12 V
--
24 V
--
2V
- 30 60 mA
[1] -
-
1000 mW
60 95 130
- 1.1 -
pF
- 10.5 -
GHz
|
▷ |