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BFU580Q_15 Datasheet, PDF (5/21 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
Table 9. Characteristics â¦continued
Tamb = 25 ï°C unless otherwise specified
Symbol Parameter
Gp(max) maximum power gain
ï¼s21ï¼2
insertion power gain
NFmin minimum noise figure
BFU580Q
NPN wideband silicon RF transistor
Conditions
f = 433 MHz; VCE = 8 V
IC = 5 mA
IC = 20 mA
IC = 30 mA
f = 900 MHz; VCE = 8 V
IC = 5 mA
IC = 20 mA
IC = 30 mA
f = 1800 MHz; VCE = 8 V
IC = 5 mA
IC = 20 mA
IC = 30 mA
f = 433 MHz; VCE = 8 V
IC = 5 mA
IC = 20 mA
IC = 30 mA
f = 900 MHz; VCE = 8 V
IC = 5 mA
IC = 20 mA
IC = 30 mA
f = 1800 MHz; VCE = 8 V
IC = 5 mA
IC = 20 mA
IC = 30 mA
f = 433 MHz; VCE = 8 V; ïS = ïopt
IC = 5 mA
IC = 20 mA
IC = 30 mA
f = 900 MHz; VCE = 8 V; ïS = ïopt
IC = 5 mA
IC = 20 mA
IC = 30 mA
f = 1800 MHz; VCE = 8 V; ïS = ïopt
IC = 5 mA
IC = 20 mA
IC = 30 mA
Min Typ Max Unit
[1]
- 18.5 - dB
- 20 - dB
- 20 - dB
[1]
- 14 - dB
- 14 - dB
- 14 - dB
[1]
- 8.5 - dB
- 8.5 - dB
- 8.5 - dB
- 16.5 - dB
- 18.5 - dB
- 18.5 - dB
- 11 - dB
- 12.5 - dB
- 12.5 - dB
- 6 - dB
- 7 - dB
- 7 - dB
- 0.7 - dB
- 1.05 - dB
- 1.2 - dB
- 0.75 - dB
- 1.05 - dB
- 1.25 - dB
- 0.85 - dB
- 1.1 - dB
- 1.3 - dB
BFU580Q
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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