BFU580Q_15 Datasheet, PDF (12/21 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU580Q
NPN wideband silicon RF transistor














 
’




V_CE = 8 V; 40 MHz  f  3 GHz.
(1) I_C = 20 mA
(2) I_C = 30 mA
Fig 16. Input reflection coefficient (s₁₁); typical values



DDD










 
’







V_CE = 8 V; 40 MHz  f  3 GHz.
(1) I_C = 20 mA
(2) I_C = 30 mA
Fig 17. Output reflection coefficient (s₂₂); typical values
BFU580Q
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 April 2014
DDD
© NXP Semiconductors N.V. 2014. All rights reserved.
12 of 21