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| BFU580Q_15 Datasheet, PDF (2/21 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU580Q
NPN wideband silicon RF transistor
Table 1. Quick reference data â¦continued
Tamb = 25 ï°C unless otherwise specified
Symbol Parameter
Conditions
Gp(max)
NFmin
PL(1dB)
maximum power gain
minimum noise figure
output power at 1 dB gain
compression
IC = 30 mA; VCE = 8 V; f = 900 MHz
IC = 5 mA; VCE = 8 V; f = 900 MHz; ïS = ïopt
IC = 30 mA; VCE = 8 V; ZS = ZL = 50 ï;
f = 900 MHz
[1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain. If K ï¼ 1 then Gp(max) = MSG.
2. Pinning information
Min
[2] -
-
-
Typ
14
0.75
13
Max
-
-
-
Unit
dB
dB
dBm
Table 2.
Pin
1
2
3
Discrete pinning
Description
emitter
collector
base
Simplified outline Graphic symbol
DDD
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BFU580Q
-
plastic surface-mounted package; exposed die pad with good heat transfer; 3 leads
OM7965
-
Customer evaluation kit for BFU580Q and BFU590Q [1]
[1] The customer evaluation kit contains the following:
a) Unpopulated RF amplifier Printed-Circuit Board (PCB)
b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
d) BFU580Q and BFU590Q samples
e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
Table 4. Marking
Type number
BFU580Q
Marking
S58
Version
SOT89
-
BFU580Q
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
2 of 21
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