BFU580Q_15 Datasheet, PDF (16/21 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU580Q
NPN wideband silicon RF transistor
10.1 Application example: FM LNA
FM LNA, optimized for low noise.
More detailed information of the application example can be found in the application note:
AN11499.
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Fig 25. Schematic FM LNA
DDD
Remark: fine tuning of components maybe required depending on PCB parasitics.
Table 10. Application performance data at 98 MHz
I_CC = 25 mA; V_CC = 5 V
Symbol Parameter
Conditions
s₂₁²
NF
insertion power gain
noise figure
IP3_o
output third-order intercept point f = 88 MHz to 108 MHz;
carrier spacing = 100 kHz
Min Typ Max Unit
- 22 - dB
- 1.6 - dB
- 15 - dBm
BFU580Q
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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