74HC2G00 Datasheet, PDF (9/16 Pages) NXP Semiconductors – Dual 2-input NAND gate

Philips Semiconductors
Dual 2-input NAND gate
Product specification
74HC2G00; 74HCT2G00
AC CHARACTERISTICS
Type 74HC2G00
GND = 0 V; t_r = t_f ≤ 6.0 ns; C_L = 50 pF; note 1.
SYMBOL
PARAMETER
TEST CONDITIONS
WAVEFORMS
V_CC (V)
MIN.
T_amb = −40 to +85 °C
t_PHL/t_PLH
propagation delay nA,
nB to nY
see Figs 5 and 6
t_THL/t_TLH
output transition time see Figs 5 and 6
2.0
−
4.5
−
6.0
−
2.0
−
4.5
−
6.0
−
T_amb = −40 to +125 °C
t_PHL/t_PLH
propagation delay nA,
nB to nY
see Figs 5 and 6
t_THL/t_TLH
output transition time see Figs 5 and 6
2.0
−
4.5
−
6.0
−
2.0
−
4.5
−
6.0
−
Note
1. All typical values are measured at T_amb = 25 °C.
TYP.
25
9
7
18
6
5
−
−
−
−
−
−
MAX.
95
19
16
95
19
16
110
22
20
125
25
20
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Type 74HCT2G00
GND = 0 V; t_r = t_f ≤ 6.0 ns; C_L = 50 pF; note 1.
SYMBOL
PARAMETER
T_amb = −40 to +85 °C
t_PHL/t_PLH
propagation delay nA,
nB to nY
t_THL/t_TLH
output transition time
T_amb = −40 to +125 °C
t_PHL/t_PLH
propagation delay nA,
nB to nY
t_THL/t_TLH
output transition time
TEST CONDITIONS
WAVEFORMS
V_CC (V)
MIN.
see Figs 5 and 6
see Figs 5 and 6
4.5
−
4.5
−
see Figs 5 and 6
see Figs 5 and 6
4.5
−
4.5
−
Note
1. All typical values are measured at T_amb = 25 °C.
TYP.
12
6
−
−
MAX.
24
19
29
22
UNIT
ns
ns
ns
ns
2003 Feb 12
9