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74HC2G00 Datasheet, PDF (8/16 Pages) NXP Semiconductors – Dual 2-input NAND gate | |||
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Philips Semiconductors
Dual 2-input NAND gate
Product speciï¬cation
74HC2G00; 74HCT2G00
Type 74HCT2G00
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); note 1.
SYMBOL
PARAMETER
Tamb = â40 to +85 °C
VIH
HIGH-level input
voltage
VIL
LOW-level input
voltage
VOH
HIGH-level output
voltage
VOL
LOW-level output
voltage
ILI
input leakage current
ICC
quiescent supply
current
âICC
additional supply
current per input
Tamb = â40 to +125 °C
VIH
HIGH-level input
voltage
VIL
LOW-level input
voltage
VOH
HIGH-level output
voltage
VOL
LOW-level output
voltage
ILI
ICC
âICC
input leakage current
quiescent supply
current
additional supply
current per input
TEST CONDITIONS
OTHER
VCC (V)
4.5 to 5.5
4.5 to 5.5
VI = VIH or VIL
IO = â20 µA
IO = â4.0 mA
VI = VIH or VIL
IO = 20 µA
IO = 4.0 mA
VI = VCC or GND
VI = VCC or GND;
IO = 0
VI = VCC â 2.1 V; IO = 0
4.5
4.5
4.5
4.5
5.5
5.5
4.5 to 5.5
4.5 to 5.5
4.5 to 5.5
VI = VIH or VIL
IO = â20 µA
IO = â4.0 mA
VI = VIH or VIL
IO = 20 µA
IO = 4.0 mA
VI = VCC or GND
VI = VCC or GND;
IO = 0
VI = VCC â 2.1 V; IO = 0
4.5
4.5
4.5
4.5
5.5
5.5
4.5 to 5.5
MIN. TYP. MAX. UNIT
2.0
1.6
â
V
â
1.2
0.8
V
4.4
4.5
â
V
4.13 4.32 â
V
â
0
0.1
V
â
0.15 0.33 V
â
â
±1.0 µA
â
â
10
µA
â
â
375
µA
2.0
â
â
â
4.4
â
3.7
â
â
â
â
â
â
â
â
â
â
â
V
0.8
V
â
V
â
V
0.1
V
0.4
V
±1.0 µA
20
µA
410
µA
Note
1. All typical values are measured at Tamb = 25 °C.
2003 Feb 12
8
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