74HC2G00 Datasheet, PDF (7/16 Pages) NXP Semiconductors – Dual 2-input NAND gate

Philips Semiconductors
Dual 2-input NAND gate
Product specification
74HC2G00; 74HCT2G00
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
OTHER
V_CC (V)
T_amb = −40 to +125 °C
V_IH
HIGH-level input
2.0
voltage
4.5
6.0
V_IL
LOW-level input voltage
2.0
4.5
6.0
V_OH
HIGH-level output
V_I = V_IH or V_IL
voltage
I_O = −20 µA
2.0
I_O = −20 µA
4.5
I_O = −20 µA
6.0
I_O = −4.0 mA
4.5
I_O = −5.2 mA
6.0
V_OL
LOW-level output
V_I = V_IH or V_IL
voltage
I_O = 20 µA
2.0
I_O = 20 µA
4.5
I_O = 20 µA
6.0
I_O = 4.0 mA
4.5
I_O = 5.2 mA
6.0
I_LI
input leakage current V_I = V_CC or GND
6.0
I_CC
quiescent supply
V_I = V_CC or GND; I_O = 0 6.0
current
1.5
3.15
4.2
−
−
−
1.9
4.4
5.9
3.7
5.2
−
−
−
−
−
−
−
Note
1. All typical values are measured at T_amb = 25 °C.
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX. UNIT
−
V
−
V
−
V
0.5
V
1.35 V
1.8
V
−
V
−
V
−
V
−
V
−
V
0.1
V
0.1
V
0.1
V
0.4
V
0.4
V
±1.0 µA
20
µA
2003 Feb 12
7