74HC2G00 Datasheet, PDF (6/16 Pages) NXP Semiconductors – Dual 2-input NAND gate

Philips Semiconductors
Dual 2-input NAND gate
Product specification
74HC2G00; 74HCT2G00
DC CHARACTERISTICS
Type 74HC2G00
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); note 1.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
OTHER
V_CC (V)
T_amb = −40 to +85 °C
V_IH
HIGH-level input
voltage
2.0
1.5
4.5
3.15
6.0
4.2
V_IL
LOW-level input voltage
2.0
−
4.5
−
6.0
−
V_OH
HIGH-level output
V_I = V_IH or V_IL
voltage
I_O = −20 µA
2.0
1.9
I_O = −20 µA
4.5
4.4
I_O = −20 µA
6.0
5.9
I_O = −4.0 mA
4.5
4.13
I_O = −5.2 mA
6.0
5.63
V_OL
LOW-level output
V_I = V_IH or V_IL
voltage
I_O = 20 µA
2.0
−
I_O = 20 µA
4.5
−
I_O = 20 µA
6.0
−
I_O = 4.0 mA
4.5
−
I_O = 5.2 mA
6.0
−
I_LI
input leakage current V_I = V_CC or GND
6.0
−
I_CC
quiescent supply
V_I = V_CC or GND; I_O = 0 6.0
−
current
TYP.
1.2
2.4
3.2
0.8
2.1
2.8
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
−
−
MAX. UNIT
−
V
−
V
−
V
0.5
V
1.35 V
1.8
V
−
V
−
V
−
V
−
V
−
V
0.1
V
0.1
V
0.1
V
0.33 V
0.33 V
±1.0 µA
10
µA
2003 Feb 12
6