74HC2G00 Datasheet, PDF (5/16 Pages) NXP Semiconductors – Dual 2-input NAND gate

Philips Semiconductors
Dual 2-input NAND gate
Product specification
74HC2G00; 74HCT2G00
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
V_CC
V_I
V_O
T_amb
supply voltage
input voltage
output voltage
operating ambient
temperature
t_r, t_f
input rise and fall times
CONDITIONS
74HC2G00
74HCT2G00
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
2.0 5.0 6.0 4.5 5.0 5.5 V
0
−
V_CC 0
−
V_CC V
0
−
V_CC 0
−
V_CC V
see DC and AC −40 +25 +125 −40 +25 +125 °C
characteristics per
device
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 6.0 V
−
−
1000 −
−
−
ns
−
6.0 500 −
6.0 500 ns
−
−
400 −
−
−
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
V_CC
supply voltage
I_IK
input diode current
I_OK
output diode current
I_O
output source or sink current
I_CC
V_CC or GND current
T_stg
storage temperature
P_D
power dissipation per package
CONDITIONS
V_I < −0.5 V or V_I > V_CC + 0.5 V; note 1
V_O < −0.5 V or V_O > V_CC + 0.5 V; note 1
−0.5 V < V_O < V_CC + 0.5 V; note 1
note 1
for temperature range from −40 to +125 °C;
note 2
MIN.
−0.5
−
−
−
−
−65
−
MAX. UNIT
+7.0 V
±20 mA
±20 mA
25
mA
50
mA
+150 °C
300 mW
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 110 °C the value of P_D derates linearly with 8 mW/K.
2003 Feb 12
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