RB520CS3002L_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – 200 mA low VF MEGA Schottky barrier rectifier

NXP Semiconductors
0.3
(1)
I_F(AV)
(A)
0.2
(2)
RB520CS3002L
200 mA low VF MEGA Schottky barrier rectifier
aaa-007768
(3)
0.1
(4)
T_j = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
0
0 25 50 75 100 125 150 175
T_sp (°C)
Fig. 12. Average forward current as a function of solder point temperature; typical values
11. Test information
P
t_cy
duty cycle δ =
t_p
t_cy
t_p
Fig. 13. Duty cycle definition
t
006aac658
The current ratings for the typical waveforms are calculated according to the equations:
I_F(AV) = I_M × δ with I_M defined as peak current, I_RMS = I_F(AV) at DC, and I_RMS = I_M × √δ with
I_RMS defined as RMS current.
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
RB520CS3002L
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 June 2013
© NXP B.V. 2013. All rights reserved
8 / 13