RB520CS3002L_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – 200 mA low VF MEGA Schottky barrier rectifier

NXP Semiconductors
RB520CS3002L
200 mA low VF MEGA Schottky barrier rectifier
10³
Z_th(j-a)
(K/W)
10²
10
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0
0.02
0.01
006aac535
1
10^{- 5}
10^{- 4}
10^{- 3}
10^{- 2}
10^{- 1}
1
Ceramic PCB, Al₂O₃, standard footprint
10
10²
10³
t_p (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7.
Symbol
V_F
Characteristics
Parameter
forward voltage
I_R
reverse current
C_d
diode capacitance
Conditions
I_F = 0.1 mA; t_p ≤ 300 µs; δ ≤ 0.02 ;
T_j = 25 °C; pulsed
I_F = 1 mA; t_p ≤ 300 µs; δ ≤ 0.02 ;
T_j = 25 °C; pulsed
I_F = 10 mA; t_p ≤ 300 µs; δ ≤ 0.02 ;
T_j = 25 °C; pulsed
I_F = 100 mA; t_p ≤ 300 µs; δ ≤ 0.02 ;
T_j = 25 °C; pulsed
I_F = 200 mA; t_p ≤ 300 µs; δ ≤ 0.02 ;
T_j = 25 °C; pulsed
V_R = 10 V; T_j = 25 °C
V_R = 1 V; f = 1 MHz; T_j = 25 °C
Min Typ Max Unit
-
210 -
mV
-
270 -
mV
-
330 450 mV
-
450 -
mV
-
540 640 mV
-
0.14 0.5 µA
-
10
-
pF
RB520CS3002L
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 June 2013
© NXP B.V. 2013. All rights reserved
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