RB520CS3002L_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – 200 mA low VF MEGA Schottky barrier rectifier

NXP Semiconductors
1
I_F
(A)
10^{- 1}
(1)
(2)
10^{- 2}
10^{- 3}
(3) (4) (5)
006aac536
10^{- 4}
0
0.2
0.4
(1) T_j = 150 °C
(2) T_j = 125 °C
(3) T_j = 85 °C
(4) T_j = 25 °C
(5) T_j = −40 °C
0.6
0.8
V_F (V)
Fig. 4. Forward current as a function of forward
voltage; typical values
20
006aac538
C_d
(pF)
15
10
RB520CS3002L
200 mA low VF MEGA Schottky barrier rectifier
10^{- 3}
I_R
(A)
10^{- 4}
10^{- 5}
006aac537
(1)
(2)
10^{- 6}
(3)
10^{- 7}
10^{- 8}
10^{- 9}
(4)
10^-10
0
10
(1) T_j = 125 °C
(2) T_j = 85 °C
(3) T_j = 25 °C
(4) T_j = −40 °C
20
30
V_R (V)
Fig. 5. Reverse current as a function of reverse
voltage; typical values
0.16
P_F(AV)
(W)
0.12
0.08
(2)
(1)
aaa-007764
(4)
(3)
5
0.04
0
0
10
20
30
V_R (V)
f = 1 MHz; T_amb = 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
0
0
0.1
T_j = 150 °C
(1) δ = 0.1; f = 20 kHz
(2) δ = 0.2; f = 20 kHz
(3) δ = 0.5; f = 20 kHz
(4) δ = 1; DC
0.2
0.3
I_F(AV) (A)
Fig. 7.
Average forward power dissipation as a
function of average forward current; typical
values
RB520CS3002L
Product data sheet
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25 June 2013
© NXP B.V. 2013. All rights reserved
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