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RB520CS3002L_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – 200 mA low VF MEGA Schottky barrier rectifier
NXP Semiconductors
RB520CS3002L
200 mA low VF MEGA Schottky barrier rectifier
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VR
reverse voltage
IF(AV)
average forward current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 115 °C;
square wave
δ = 0.5 ; f = 20 kHz; Tsp ≤ 135 °C;
square wave
IFSM
non-repetitive peak forward
tp = 8.3 ms; Tj(init) = 25 °C; half sine
current
wave
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
Min Max Unit
-
30
V
[1]
-
200 mA
-
200 mA
-
3
A
[2]
-
315 mW
[1]
-
565 mW
[3]
-
865 mW
-
150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1][2] -
-
395 K/W
[1][3] -
-
220 K/W
[1][4] -
-
145 K/W
[5]
-
-
70
K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Soldering point of cathode tab.
RB520CS3002L
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 June 2013
© NXP B.V. 2013. All rights reserved
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