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| RB520CS3002L_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – 200 mA low VF MEGA Schottky barrier rectifier | |||
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RB520CS3002L
200 mA low VF MEGA Schottky barrier rectifier
25 June 2013
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with
an integrated guard ring for stress protection, encapsulated in DFN1006-2 (SOD882)
leadless ultra small Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
⢠Average forward current: IF(AV) ⤠200 mA
⢠Reverse voltage: VR ⤠30 V
⢠Low forward voltage: VF ⤠450 mV
⢠Low reverse current: IR ⤠0.5 μA
⢠AEC-Q101 qualified
⢠Leadless ultra small SMD plastic package
3. Applications
⢠Low current rectification
⢠High efficiency DC-to-DC conversion
⢠Switch mode power supply
⢠Reverse polarity protection
⢠Low power consumption applications
4. Quick reference data
Table 1.
Symbol
IF(AV)
Quick reference data
Parameter
average forward
current
VR
reverse voltage
VF
forward voltage
IR
reverse current
Conditions
δ = 0.5 ; f = 20 kHz; Tamb ⤠115 °C;
square wave
δ = 0.5 ; f = 20 kHz; Tsp ⤠135 °C;
square wave
IF = 10 mA; tp ⤠300 µs; δ ⤠0.02 ;
Tj = 25 °C; pulsed
VR = 10 V; Tj = 25 °C
Min Typ Max Unit
[1]
-
-
200 mA
-
-
200 mA
-
-
30
V
-
330 450 mV
-
0.14 0.5 µA
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
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